ZVN2110GTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN2110GTC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: SOT-223
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ZVN2110GTC Datasheet (PDF)
zvn2110gta zvn2110gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain
zvn2110g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN2110GMODE VERTICAL DMOS FETISSUE 3 OCTOBER 1995 FEATURESD* 6A PULSE DRAIN CURRENT* FAST SWITCHING SPEED=VVV SVVDPARTMARKING DETAIL - ZVN2110GCOMPLEMENTARY TYPE - ZVP2110GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITVDrain-Source Voltage VDS 100 V10 Continuous Drain Current at Tamb=25C ID 500 mAPulsed Drain
zvn2110astoa zvn2110astob zvn2110astz.pdf
N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS
zvn2110a.pdf
N-CHANNEL ENHANCEMENT0A ZVN2110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDSVGS=10V * RDS(on)= 49V8V7V6VD G S5VE-LineTO92 Compatible4VABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS
zvn2110c.pdf
N-CHANNEL ENHANCEMENTZVN2110CMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-Line T V TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V 8 V ID VD V V I
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918