ZVN3306ASTOB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN3306ASTOB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 Vtrⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 25 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO-92
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ZVN3306ASTOB Datasheet (PDF)
zvn3306astoa zvn3306astob zvn3306astz.pdf
N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip
zvn3306a.pdf
N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip
zvn3306f.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20
zvn3306fta zvn3306ftc.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20
zvn3306fta.pdf
ZVN3306FTAwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918