ZVN3306FTC Todos los transistores

 

ZVN3306FTC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVN3306FTC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET ZVN3306FTC

 

Principales características: ZVN3306FTC

 ..1. Size:85K  diodes
zvn3306fta zvn3306ftc.pdf pdf_icon

ZVN3306FTC

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * RDS(on)=5 S * 60 Volt VDS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 150 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20

 5.1. Size:842K  cn vbsemi
zvn3306fta.pdf pdf_icon

ZVN3306FTC

ZVN3306FTA www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G

 6.1. Size:99K  diodes
zvn3306f.pdf pdf_icon

ZVN3306FTC

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * RDS(on)=5 S * 60 Volt VDS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 150 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20

 7.1. Size:38K  diodes
zvn3306astoa zvn3306astob zvn3306astz.pdf pdf_icon

ZVN3306FTC

N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5 D G S ID= E-Line 1A TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.5A PARAMETER SYMBOL VALUE UNIT 0.25A Drain-Source Voltage VDS 60 V 10 Continuous Drain Current at Tamb=25 C ID 270 mA Pulsed Drain Current IDM 3A cs Gate-Source Voltage VGS 20 V Power Dissip

Otros transistores... ZVN2110GTA , ZVN2110GTC , ZVN2120GTA , ZVN2120GTC , ZVN3306ASTOA , ZVN3306ASTOB , ZVN3306ASTZ , ZVN3306FTA , MMIS60R580P , ZVN3310ASTOB , ZVN3310ASTZ , ZVN3310FTA , ZVN3310FTC , ZVN3320FTA , ZVN3320FTC , ZVN4106FTA , ZVN4106FTC .

History: SIA430DJ | SUP70060E | ZVN3306FTA | UT50N03 | ZVN3320FTC | ZVN4106FTA

 

 
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