ZVN3320FTC Todos los transistores

SOT23 N-CHANNEL ENHANCEMENT ZVN3320F MODE VERTICAL DMOS FET ISSUE 3 DECEMBER 1995 FEATURES * 200 Volt VDS S * RDS(on)=25 D G PARTMARKING DETAIL MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 60 mA Pulsed Drain Current IDM 1A Gate-Source Voltage VGS 20 V Power Dissipation at

SOT23 N-CHANNEL ENHANCEMENT ZVN3320F MODE VERTICAL DMOS FET ISSUE 3 DECEMBER 1995 FEATURES * 200 Volt VDS S * RDS(on)=25 D G PARTMARKING DETAIL MU SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tamb=25 C ID 60 mA Pulsed Drain Current IDM 1A Gate-Source Voltage VGS 20 V Power Dissipation at

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * RDS(on)=5 S * 60 Volt VDS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 150 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20

A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode VDS (V) 100 Low input capacitance RDS(ON) ( ) 10 Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Description and

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * RDS(on)=5 S * 60 Volt VDS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 150 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20

N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5 D G S ID= E-Line 1A TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.5A PARAMETER SYMBOL VALUE UNIT 0.25A Drain-Source Voltage VDS 60 V 10 Continuous Drain Current at Tamb=25 C ID 270 mA Pulsed Drain Current IDM 3A cs Gate-Source Voltage VGS 20 V Power Dissip

A Product Line of Diodes Incorporated ZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits High pulse current handling in linear mode VDS (V) 100 Low input capacitance RDS(ON) ( ) 10 Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Description and

N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5 D G S ID= E-Line 1A TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.5A PARAMETER SYMBOL VALUE UNIT 0.25A Drain-Source Voltage VDS 60 V 10 Continuous Drain Current at Tamb=25 C ID 270 mA Pulsed Drain Current IDM 3A cs Gate-Source Voltage VGS 20 V Power Dissip

ZVN3306FTA www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G