ZVN3320FTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN3320FTC
Código: MU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.06 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 Vtrⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 25 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ZVN3320FTC
ZVN3320FTC Datasheet (PDF)
zvn3320fta zvn3320ftc.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3320FMODE VERTICAL DMOS FETISSUE 3 DECEMBER 1995 FEATURES* 200 Volt VDSS* RDS(on)=25DGPARTMARKING DETAIL MUSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 60 mAPulsed Drain Current IDM 1AGate-Source Voltage VGS 20 VPower Dissipation at
zvn3320f.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3320FMODE VERTICAL DMOS FETISSUE 3 DECEMBER 1995 FEATURES* 200 Volt VDSS* RDS(on)=25DGPARTMARKING DETAIL MUSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 60 mAPulsed Drain Current IDM 1AGate-Source Voltage VGS 20 VPower Dissipation at
zvn3306f.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20
zvn3310a.pdf
N-CHANNEL ENHANCEMENT0A ZVN3310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 10VGS=10V D G9V S8V7V E-Line6VTO92 Compatible5VABSOLUTE MAXIMUM RATINGS.4VPARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 200 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS
zvn3310astob zvn3310astz.pdf
N-CHANNEL ENHANCEMENT0A ZVN3310AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 10VGS=10V D G9V S8V7V E-Line6VTO92 Compatible5VABSOLUTE MAXIMUM RATINGS.4VPARAMETER SYMBOL VALUE UNIT3VDrain-Source Voltage VDS 100 V8 10Continuous Drain Current at Tamb=25C ID 200 mAPulsed Drain Current IDM 2AGate-Source Voltage VGS
zvn3310fta zvn3310ftc.pdf
A Product Line ofDiodes IncorporatedZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode VDS (V) 100 Low input capacitance RDS(ON) () 10 Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Description and
zvn3306fta zvn3306ftc.pdf
SOT23 N-CHANNEL ENHANCEMENTZVN3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996FEATURES* RDS(on)=5S* 60 Volt VDSDCOMPLEMENTARY TYPE - ZVP3306FGPARTMARKING DETAIL - MCSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 150 mAPulsed Drain Current IDM 3AGate-Source Voltage VGS 20
zvn3306astoa zvn3306astob zvn3306astz.pdf
N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip
zvn3310f.pdf
A Product Line ofDiodes IncorporatedZVN3310F 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode VDS (V) 100 Low input capacitance RDS(ON) () 10 Fast switching speed Lead Free By Design/RoHS Compliant (Note 1) Description and
zvn3306a.pdf
N-CHANNEL ENHANCEMENTZVN3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDSon)=5D G SID=E-Line1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V10Continuous Drain Current at Tamb=25C ID 270 mAPulsed Drain Current IDM 3Acs Gate-Source Voltage VGS 20 VPower Dissip
zvn3306fta.pdf
ZVN3306FTAwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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