ZVN4206AVSTOB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN4206AVSTOB
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO-92
- Selección de transistores por parámetros
ZVN4206AVSTOB Datasheet (PDF)
zvn4206avstob zvn4206avstz.pdf

N-CHANNEL ENHANCEMENTZVN4206AVMODE VERTICAL DMOS FETISSUE 3 - APRIL 1998FEATURES* 60 Volt VDS* RDS(on)= 1* Repetitive avalanche rating* No transient protection requiredD* Characterised for 5V logic drive G SAPPLICATIONS* Automotive relay driversE-Line* Stepper motor driverTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Vol
zvn4206astoa zvn4206astob zvn4206astz zvn4206avstoa.pdf

N-CHANNEL ENHANCEMENTZVN4206AMODE VERTICAL DMOS FETISSUE 2 JUNE 94FEATURES* 60 Volt VDS* RDS(on) =1DGSE-LINETO92 COMPATIBLEABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 8AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Ptot 0.7 W
zvn4206av.pdf

N-CHANNEL ENHANCEMENTZVN4206AVMODE VERTICAL DMOS FETISSUE 3 - APRIL 1998FEATURES* 60 Volt VDS* RDS(on)= 1* Repetitive avalanche rating* No transient protection requiredD* Characterised for 5V logic drive G SAPPLICATIONS* Automotive relay driversE-Line* Stepper motor driverTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Vol
zvn4206a.pdf

N-CHANNEL ENHANCEMENTZVN4206AMODE VERTICAL DMOS FETISSUE 2 JUNE 94FEATURES* 60 Volt VDS* RDS(on) =1DGSE-LINETO92 COMPATIBLEABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 8AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Ptot 0.7 W
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTB6410AN | SDF1NA60



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