ZVN4210ASTOA Todos los transistores

 

ZVN4210ASTOA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVN4210ASTOA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-92
     - Selección de transistores por parámetros

 

ZVN4210ASTOA Datasheet (PDF)

 ..1. Size:31K  diodes
 zvn4210astoa zvn4210astob zvn4210astz.pdf pdf_icon

ZVN4210ASTOA

N-CHANNEL ENHANCEMENT0A ZVN4210AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 1.5* Spice model availableD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 V10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower

 6.1. Size:42K  diodes
 zvn4210a.pdf pdf_icon

ZVN4210ASTOA

N-CHANNEL ENHANCEMENT0A ZVN4210AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 1.5* Spice model availableD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 V10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower

 7.1. Size:32K  diodes
 zvn4210gta zvn4210gtc.pdf pdf_icon

ZVN4210ASTOA

SOT223 N-CHANNEL ENHANCEMENTZVN4210GMODE VERTICAL DMOS FETISSUE 2 - NOVEMBER 1995FEATURESD* Low RDS(on) = 1.5PARTMARKING DETAIL - ZVN4210SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 0.8 APulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C P

 7.2. Size:42K  diodes
 zvn4210g.pdf pdf_icon

ZVN4210ASTOA

SOT223 N-CHANNEL ENHANCEMENTZVN4210GMODE VERTICAL DMOS FETISSUE 2 - NOVEMBER 1995FEATURESD* Low RDS(on) = 1.5PARTMARKING DETAIL - ZVN4210SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 0.8 APulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C P

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: P5506BVA | IRFSL31N20DP | HM4612 | P9515BD | OSG80R900FF | AP9563GK | AOTF7N70

 

 
Back to Top

 


 
.