ZVN4210ASTZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN4210ASTZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de MOSFET ZVN4210ASTZ
ZVN4210ASTZ Datasheet (PDF)
zvn4210astoa zvn4210astob zvn4210astz.pdf
N-CHANNEL ENHANCEMENT0A ZVN4210AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 1.5* Spice model availableD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 V10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower
zvn4210a.pdf
N-CHANNEL ENHANCEMENT0A ZVN4210AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)= 1.5* Spice model availableD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 V10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower
zvn4210gta zvn4210gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN4210GMODE VERTICAL DMOS FETISSUE 2 - NOVEMBER 1995FEATURESD* Low RDS(on) = 1.5PARTMARKING DETAIL - ZVN4210SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 0.8 APulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C P
zvn4210g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN4210GMODE VERTICAL DMOS FETISSUE 2 - NOVEMBER 1995FEATURESD* Low RDS(on) = 1.5PARTMARKING DETAIL - ZVN4210SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 0.8 APulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C P
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918