ZVN4210GTC Todos los transistores

 

ZVN4210GTC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVN4210GTC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: SOT-223

 Búsqueda de reemplazo de MOSFET ZVN4210GTC

 

Principales características: ZVN4210GTC

 ..1. Size:32K  diodes
 zvn4210gta zvn4210gtc.pdf pdf_icon

ZVN4210GTC

SOT223 N-CHANNEL ENHANCEMENT ZVN4210G MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES D * Low RDS(on) = 1.5 PARTMARKING DETAIL - ZVN4210 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 0.8 A Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25 C P

 6.1. Size:42K  diodes
 zvn4210g.pdf pdf_icon

ZVN4210GTC

SOT223 N-CHANNEL ENHANCEMENT ZVN4210G MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES D * Low RDS(on) = 1.5 PARTMARKING DETAIL - ZVN4210 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 0.8 A Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation at Tamb=25 C P

 7.1. Size:42K  diodes
 zvn4210a.pdf pdf_icon

ZVN4210GTC

N-CHANNEL ENHANCEMENT 0A ZVN4210A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 1.5 * Spice model available D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 450 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power

 7.2. Size:31K  diodes
 zvn4210astoa zvn4210astob zvn4210astz.pdf pdf_icon

ZVN4210GTC

N-CHANNEL ENHANCEMENT 0A ZVN4210A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 1.5 * Spice model available D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V 10 Continuous Drain Current at Tamb=25 C ID 450 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power

MOSTRAR MÁS

Otros transistores... ZVN4206GTA , ZVN4206GTC , ZVN4206GVTA , ZVN4206GVTC , ZVN4210ASTOA , ZVN4210ASTOB , ZVN4210ASTZ , ZVN4210GTA , AO3400 , ZVN4306ASTOB , ZVN4306ASTZ , ZVN4306AVSTOA , ZVN4306AVSTOB , ZVN4306AVSTZ , ZVN4306GTA , ZVN4306GTC , ZVN4306GVTA .

History: AP4438CGM | PTP04N04N | SSM3310GH | SST65R600S3 | INK0112AC1 | ZVN4206ASTOA

 

 
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