ZVNL110ASTOB Todos los transistores

 

ZVNL110ASTOB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVNL110ASTOB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-92

 Búsqueda de reemplazo de MOSFET ZVNL110ASTOB

 

Principales características: ZVNL110ASTOB

 ..1. Size:20K  diodes
 zvnl110astoa zvnl110astob zvnl110astz.pdf pdf_icon

ZVNL110ASTOB

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS 20 V Power Dissipati

 6.1. Size:27K  diodes
 zvnl110a.pdf pdf_icon

ZVNL110ASTOB

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS 20 V Power Dissipati

 7.1. Size:20K  diodes
 zvnl110gta zvnl110gtc.pdf pdf_icon

ZVNL110ASTOB

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL110G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * LOW RDS(ON) - 3 PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 600 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation a

 7.2. Size:25K  diodes
 zvnl110g.pdf pdf_icon

ZVNL110ASTOB

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL110G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * LOW RDS(ON) - 3 PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 600 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation a

MOSTRAR MÁS

Otros transistores... ZVN4424GTC , ZVN4424ZTA , ZVN4525E6TA , ZVN4525E6TC , ZVN4525GTA , ZVN4525GTC , ZVN4525ZTA , ZVNL110ASTOA , 13N50 , ZVNL110ASTZ , ZVNL110GTA , ZVNL110GTC , ZVNL120ASTOA , ZVNL120ASTOB , ZVNL120ASTZ , ZVNL120C , ZVNL120GTA .

History: MTP4N90 | PSMN6R4-30MLD | IPA60R180P7S

 

 
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