ZVNL110GTA Todos los transistores

 

ZVNL110GTA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVNL110GTA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SOT-223

 Búsqueda de reemplazo de MOSFET ZVNL110GTA

 

Principales características: ZVNL110GTA

 ..1. Size:20K  diodes
 zvnl110gta zvnl110gtc.pdf pdf_icon

ZVNL110GTA

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL110G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * LOW RDS(ON) - 3 PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 600 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation a

 6.1. Size:25K  diodes
 zvnl110g.pdf pdf_icon

ZVNL110GTA

SOT223 N-CHANNEL ENHANCEMENT MODE ZVNL110G LOW THRESHOLD VERTICAL DMOS FET ISSUE 2 - FEBRUARY 1996 FEATURES D * LOW RDS(ON) - 3 PARTMARKING DETAIL - ZVNL110 S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 600 mA Pulsed Drain Current IDM 6A Gate-Source Voltage VGS 20 V Power Dissipation a

 7.1. Size:20K  diodes
 zvnl110astoa zvnl110astob zvnl110astz.pdf pdf_icon

ZVNL110GTA

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS 20 V Power Dissipati

 7.2. Size:27K  diodes
 zvnl110a.pdf pdf_icon

ZVNL110GTA

N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=3 * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25 C ID 320 mA Pulsed Drain Current IDM 6A Gate Source Voltage VGS 20 V Power Dissipati

MOSTRAR MÁS

Otros transistores... ZVN4525E6TA , ZVN4525E6TC , ZVN4525GTA , ZVN4525GTC , ZVN4525ZTA , ZVNL110ASTOA , ZVNL110ASTOB , ZVNL110ASTZ , 12N60 , ZVNL110GTC , ZVNL120ASTOA , ZVNL120ASTOB , ZVNL120ASTZ , ZVNL120C , ZVNL120GTA , ZVNL120GTC , ZVP0545ASTOA .

History: MTP4435V8 | SSS2N80A | AP4563GH | ZVN4306GTC | ZVN4310ASTZ | MTP3P25

 

 
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