SI1406DH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1406DH
Código: AB*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 8 V
Corriente continua de drenaje (Id): 3.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 1.2 V
Tiempo de elevación (tr): 47 nS
Resistencia drenaje-fuente RDS(on): 0.065 Ohm
Empaquetado / Estuche: SOT-363
Búsqueda de reemplazo de MOSFET SI1406DH
SI1406DH Datasheet (PDF)
1.1. si1406dh.pdf 
Size:229K _vishay
Si1406DH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.065 at VGS = 4.5 V 3.9 • TrenchFET® Power MOSFETs: 1.8 V Rated 0.075 at VGS = 2.5 V 20 3.6 • Thermally Enhanced SC-70 Package 0.096 at VGS = 1.8 V 3.2 • Compliant to RoHS Directive 2002/95/EC APPLICAT
5.1. si1400dl.pdf Size:91K _vishay
Si1400DL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.150 at VGS = 4.5 V 1.7 • TrenchFET® Power MOSFET: 2.5 V Rated - 20 0.235 at VGS = 2.5 V 1.3 • Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code ND XX 5 D 2 D Lot Traceab
5.2. si1405dl.pdf Size:245K _vishay
Si1405DL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.125 at VGS = - 4.5 V ± 1.8 • TrenchFET® Power MOSFET: 1.8 V Rated - 8 0.160 at VGS = - 2.5 V ± 1.6 • Compliant to RoHS Directive 2002/95/EC 0.210 at VGS = - 1.8 V ± 1.4 SOT-363 SC-70 (6-LEADS) D 1 6 D Mar
5.3. si1404bd.pdf Size:105K _vishay
Si1404BDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A)a Qg (Typ.) Definition 0.238 at VGS = 4.5 V 1.9 TrenchFET Power MOSFET 30 1.1 nC 0.380 at VGS = 2.5 V 1.51 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SC-70 (6-LEADS) Load Switch for Portable Dev
5.4. si1402dh.pdf Size:94K _vishay
Si1402DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.077 at VGS = 4.5 V 3.4 • TrenchFET® Power MOSFET: 2.5 V Rated 30 0.120 at VGS = 2.5 V 2.5 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications SOT-363 SC-70 (6-LEA
5.5. si1403dl.pdf Size:409K _vishay
Si1403DL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) (?) ID (A) Pb-free Available 0.180 at VGS = - 4.5 V 1.5 RoHS* - 25 0.200 at VGS = - 3.6 V 1.4 COMPLIANT 0.265 at VGS = - 2.5 V 1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OA XX 5 D 2 D Lot Traceability and Date Code G 3 4 S Part
5.6. si1403bdl.pdf Size:249K _vishay
Si1403BDL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.150 at VGS = - 4.5 V - 1.5 • TrenchFET® Power MOSFET 0.175 at VGS = - 3.6 V - 1.4 2.9 - 20 • Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 2.5 V - 1.2 SOT-363 SC-70 (6-LEADS) D 1 6 D
5.7. si1407dl.pdf Size:75K _vishay
Si1407DL Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) rDS(on) (?) ID (A) Pb-free 1.8 V Rated Available 0.130 at VGS = - 4.5 V - 1.8 RoHS* - 12 0.170 at VGS = - 2.5 V - 1.5 COMPLIANT 0.225 at VGS = - 1.8 V - 1.3 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code OC XX 5 D 2 D Lot Traceability and Date Code Part # C
5.8. si1405bdh.pdf Size:238K _vishay
Si1405BDH Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)c Qg (Typ.) Definition 0.112 at VGS = - 4.5 V - 1.6 • TrenchFET® Power MOSFET - 8 0.160 at VGS = - 2.5 V - 1.6 3.67 nC • Compliant to RoHS Directive 2002/95/EC 0.210 at VGS = - 1.8 V - 1.6 APPLICATIONS • Load Switch for
5.9. si1401edh.pdf Size:259K _vishay
New Product Si1401EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.034 at VGS = - 4.5 V - 4 • TrenchFET® Power MOSFET 0.046 at VGS = - 2.5 V - 4 • Typical ESD Performance 1500 V - 12 14.1 nC • 100 % Rg Tested 0.070 at VGS = - 1.8 V - 4 • Compl
5.10. si1404bdh.pdf Size:105K _vishay
Si1404BDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)a Qg (Typ.) Definition 0.238 at VGS = 4.5 V 1.9 • TrenchFET® Power MOSFET 30 1.1 nC 0.380 at VGS = 2.5 V 1.51 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SC-70 (6-LEADS) • Load Switch f
5.11. si1403cdl.pdf Size:235K _vishay
Si1403CDL Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)c Qg (Typ.) Definition 0.140 at VGS = - 4.5 V - 2.1 • TrenchFET® Power MOSFET - 20 0.160 at VGS = - 3.6 V - 1.9 4 nC • 100 % Rg Tested 0.222 at VGS = - 2.5 V - 1.6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS
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