SI1427EDH Todos los transistores

 

SI1427EDH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI1427EDH

Código: BR*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.56 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Tiempo de elevación (tr): 1000 nS

Resistencia drenaje-fuente RDS(on): 0.064 Ohm

Empaquetado / Estuche: SOT-363

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SI1427EDH Datasheet (PDF)

1.1. si1427edh.pdf Size:259K _vishay

SI1427EDH
SI1427EDH

New Product Si1427EDH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition 0.064 at VGS = - 4.5 V - 2.0e • TrenchFET® Power MOSFET 0.085 at VGS = - 2.5 V - 2.0e • 100 % Rg Tested - 20 7.6 nC 0.110 at VGS = - 1.8 V - 2.0e • Typical ESD Performance 2000 V

5.1. si1424edh.pdf Size:261K _vishay

SI1427EDH
SI1427EDH

New Product Si1424EDH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.033 at VGS = 4.5 V 4 • TrenchFET® Power MOSFET 0.038 at VGS = 2.5 V 4 • Typical ESD Protection 4000 V 20 6 nC 0.045 at VGS = 1.8 V 4 • 100 % Rg Tested • Compliant to RoHS Direct

5.2. si1422dh.pdf Size:261K _vishay

SI1427EDH
SI1427EDH

New Product Si1422DH Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)a Qg (Typ.) Definition 0.026 at VGS = 4.5 V 4 • TrenchFET® Power MOSFET • 100 % Rg Tested 12 0.030 at VGS = 2.5 V 4 7.5 nC • Compliant to RoHS Directive 2002/95/EC 0.036 at VGS = 1.8 V 4 APPLICATIONS • Loa

 5.3. si1428edh.pdf Size:262K _vishay

SI1427EDH
SI1427EDH

New Product Si1428EDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.045 at VGS = 10 V 4 • TrenchFET® Power MOSFET 30 0.049 at VGS = 4.5 V 4 4 nC • Typical ESD Protection 2000 V HBM 0.060 at VGS = 2.5 V 4 • 100 % Rg Tested • Compliant to RoHS Dire

5.4. si1426dh.pdf Size:242K _vishay

SI1427EDH
SI1427EDH

Si1426DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.075 at VGS = 10 V 3.6 • TrenchFET® Power MOSFET 30 0.115 at VGS = 4.5 V 2.9 • Thermally Enhanced SC-70 Package • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Boost Conve

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