MDV1525URH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MDV1525URH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 13.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.7 V

Tiempo de elevación (tr): 11.8 nS

Conductancia de drenaje-sustrato (Cd): 154 pF

Resistencia drenaje-fuente RDS(on): 0.0101 Ohm

Empaquetado / Estuche: PDFN33

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MDV1525URH Datasheet (PDF)

1.1. mdv1525urh.pdf Size:851K _magnachip

MDV1525 Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ General Description Features The MDV1525 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1525 is suitable for DC/DC converter and < 10.1mΩ @V = 10V GS general purpose applica

4.1. mdv1528.pdf Size:1098K _update

MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ General Description Features The MDV1528 uses advanced MagnaChip’s MOSFET  VDS = 30V Technology, which provides high performance in on-state  I = 16A @V = 10V D GS resistance, fast switching performance and excellent  R DS(ON) quality. MDV1528 is suitable for DC/DC converter and < 18.8mΩ @V = 10V GS general

4.2. mdv1522urh.pdf Size:850K _magnachip

MDV1522 Single N-channel Trench MOSFET 30V, 28A, 4.9mΩ General Description Features The MDV1522 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 28A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1522 is suitable for DC/DC converter and < 4.9mΩ @V = 10V GS general purpose applicati

4.3. mdv1524urh.pdf Size:850K _magnachip

MDV1524 Single N-channel Trench MOSFET 30V, 24A, 8.1mΩ General Description Features The MDV1524 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1524 is suitable for DC/DC converter and < 8.1mΩ @V = 10V GS general purpose applicati

4.4. mdv1526urh.pdf Size:854K _magnachip

MDV1526 Single N-channel Trench MOSFET 30V, 24A, 11mΩ General Description Features The MDV1526 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1526 is suitable for DC/DC converter and < 11.0mΩ @V = 10V GS general purpose applicati

4.5. mdv1527urh.pdf Size:855K _magnachip

MDV1527 Single N-channel Trench MOSFET 30V, 20A, 15.9mΩ General Description Features The MDV1527 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 20A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1527 is suitable for DC/DC converter and < 15.9mΩ @V = 10V GS general purpose applica

4.6. mdv1528urh.pdf Size:856K _magnachip

MDV1528 Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ General Description Features The MDV1528 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 16A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1528 is suitable for DC/DC converter and < 18.8mΩ @V = 10V GS general purpose applica

4.7. mdv1523urh.pdf Size:852K _magnachip

MDV1523 Single N-channel Trench MOSFET 30V, 24A, 6.1mΩ General Description Features The MDV1523 uses advanced MagnaChip’s MOSFET V = 30V DS Technology, which provides high performance in on-state ID = 24A @VGS = 10V resistance, fast switching performance and excellent RDS(ON) quality. MDV1523 is suitable for DC/DC converter and < 6.1mΩ @V = 10V GS general purpose applicati

4.8. mdv1529eurh.pdf Size:1069K _magnachip

MDV1529E Single N-channel Trench MOSFET 30V, 28A, 4.5mΩ General Description Features The MDV1529E uses advanced MagnaChip’s MOSFET  VDS = 32V Technology, which provides high performance in on-state  I = 28A @V = 10V D GS resistance, fast switching performance and excellent  R DS(ON) quality. MDV1529E is suitable for DC/DC converter and < 4.5mΩ @V = 10V GS general

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