SIHG30N60E MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: SIHG30N60E

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SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.125 Reduced switching and conduction losses Qg max. (nC) 130 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Available Qgd (

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SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology Reduced trr, Qrr, and IRRM RDS(on) max. at 25 C ( ) VGS = 10 V 0.098 Low figure-of-merit (FOM) Ron x Qg Qg (Max.) (nC) 155 Low input capacitance (Ciss) Qgs (nC) 22 Reduced s

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SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.150 - Low Input Capacitance (Ciss) Qg max. (nC) 96 - Reduced Capacitive Switching Losses Qgs (nC) 18 - High Body Diode Ruggedness Qgd (nC) 29 - Avalanche Energy Rated (UIS)

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SiHG33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low Input Capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.099 Reducted Switching and Conduction Losses Qg (Max.) (nC) 150 Ultra Low Gate Charge (Qg) Qgs (nC) 24 Qgd (nC) 42 Avalanche Energy Rated (UIS

Otros transistores... SIHG22N60S , SIHG22N65E , SIHG23N60E , SIHG24N65E , SIHG25N40D , SIHG25N50E , SIHG28N60EF , SIHG28N65E , RFP50N06 , SIHG32N50D , SIHG33N60E , SIHG33N60EF , SIHG460B , SIHG47N60E , SIHG47N60EF , SIHG47N60S , SIHG47N65E .