IPP111N15N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP111N15N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 83 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 378 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0111 Ohm
Paquete / Cubierta: TO220
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IPP111N15N3 Datasheet (PDF)
ipp111n15n3.pdf

isc N-Channel MOSFET Transistor IPP111N15N3IIPP111N15N3FEATURESStatic drain-source on-resistance:RDS(on) 11.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T
ipb108n15n3g ipp111n15n3g ipi111n15n3g.pdf

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM)DS(on)ID 83 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDE
ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 10.8mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 83 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE
ipb114n03l-g ipp114n03l-g.pdf

Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
Otros transistores... IPP05CN10N , IPP070N08N3 , IPP075N15N3 , IPP076N12N3 , IPP076N15N5 , IPP093N06N3 , IPP100N08N3 , IPP110N20N3 , 5N60 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IPP320N20N3 , IPP530N15N3 .
History: MDD4N25RH | CS4N70F | MDD5N40RH | IXTA1N100P | 2SK3879
History: MDD4N25RH | CS4N70F | MDD5N40RH | IXTA1N100P | 2SK3879



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