IPP111N15N3 Todos los transistores

 

IPP111N15N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP111N15N3

Código: 111N15N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente |Vds|: 150 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 83 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 41 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 378 pF

Resistencia drenaje-fuente RDS(on): 0.0111 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET IPP111N15N3

 

IPP111N15N3 Datasheet (PDF)

0.1. ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf Size:438K _infineon

IPP111N15N3
IPP111N15N3

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 10.8mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 83 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JE

0.2. ipp111n15n3.pdf Size:245K _inchange_semiconductor

IPP111N15N3
IPP111N15N3

isc N-Channel MOSFET Transistor IPP111N15N3IIPP111N15N3FEATURESStatic drain-source on-resistance:RDS(on) 11.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

 9.1. ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g.pdf Size:690K _infineon

IPP111N15N3
IPP111N15N3

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

9.2. ipb110n06lg ipp110n06lg.pdf Size:740K _infineon

IPP111N15N3
IPP111N15N3

IPB110N06L G IPP110N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 11 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

 9.3. ipb107n20na ipp110n20na.pdf Size:652K _infineon

IPP111N15N3
IPP111N15N3

IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE

9.4. ipb114n03l-g ipp114n03l-g.pdf Size:300K _infineon

IPP111N15N3
IPP111N15N3

Type IPP114N03L GIPB114N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 11.4mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.5. ipp114n03l.pdf Size:617K _infineon

IPP111N15N3
IPP111N15N3

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9.6. ipp114n12n3g.pdf Size:527K _infineon

IPP111N15N3
IPP111N15N3

$$ " " TM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D R ( 492??6= ?@C>2= =6G6= 11 4m D n)m xR I46==6?E 82E6 492C86 I AC@5F4E !) ' D n) 7 DR /6CJ =@H @? C6D:DE2?46 D n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E 92=@86? 7C661)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7

9.7. ipp110n20n3.pdf Size:245K _inchange_semiconductor

IPP111N15N3
IPP111N15N3

isc N-Channel MOSFET Transistor IPP110N20N3IIPP110N20N3FEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =

9.8. ipp110n20na.pdf Size:245K _inchange_semiconductor

IPP111N15N3
IPP111N15N3

isc N-Channel MOSFET Transistor IPP110N20NAIIPP110N20NAFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

9.9. ipp114n12n3.pdf Size:245K _inchange_semiconductor

IPP111N15N3
IPP111N15N3

isc N-Channel MOSFET Transistor IPP114N12N3IIPP114N12N3FEATURESStatic drain-source on-resistance:RDS(on) 11.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(

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