MTD5P06VT4G Todos los transistores

 

MTD5P06VT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTD5P06VT4G
   Código: 5P06V
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: DPAK
 

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MTD5P06VT4G Datasheet (PDF)

 ..1. Size:75K  onsemi
 mtd5p06v-d mtd5p06vt4 mtd5p06vt4g.pdf pdf_icon

MTD5P06VT4G

MTD5P06VPreferred DevicePower MOSFET5 Amps, 60 Volts P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and com

 ..2. Size:828K  cn vbsemi
 mtd5p06vt4g.pdf pdf_icon

MTD5P06VT4G

MTD5P06VT4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

 6.1. Size:245K  motorola
 mtd5p06vrev1a.pdf pdf_icon

MTD5P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o

 6.2. Size:212K  motorola
 mtd5p06v.pdf pdf_icon

MTD5P06VT4G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o

MOSTRAR MÁS

Otros transistores... MTC4503LQ8 , MTC5806V8 , MTD10N10ELT4 , MTD120C10J4 , MTD20P03HDLT4 , MTD20P06HDLT4 , MTD2955VT4 , MTD5P06VT4 , 10N60 , MTD6N15T4 , MTD6N15T4G , MTD6N15T4GV , MTD6N20ET4 , MTD6N20ET4G , MTD6P10E , MTDP9620Q8 , MTDP9933KQ8 .

History: SWF5N30D

 

 
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