MTD5P06VT4G Todos los transistores

MTD5P06V Preferred Device Power MOSFET 5 Amps, 60 Volts P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power http //onsemi.com motor controls, these devices are particularly well suited for bridge circuits where diode speed and com

MTD5P06VT4G www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD5P06V/D Designer's Data Sheet MTD5P06V TMOS V. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 5 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.450 OHM tance area product about o

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD5P06V/D Designer's Data Sheet MTD5P06V TMOS V. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 5 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.450 OHM tance area product about o

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD5P06E/D Designer's Data Sheet MTD5P06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 5.0 AMPERES 60 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.55 OHM energy in the avalanche a

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD5P06E/D Designer's Data Sheet MTD5P06E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET P Channel Enhancement Mode Silicon Gate 5.0 AMPERES 60 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.55 OHM energy in the avalanche a