FDD2670 Todos los transistores

 

FDD2670 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD2670
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TO252 DPAK
 

 Búsqueda de reemplazo de FDD2670 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDD2670 PDF Specs

 ..1. Size:95K  fairchild semi
fdd2670.pdf pdf_icon

FDD2670

November 2001 FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fast switching speed These MOSFETs... See More ⇒

 ..2. Size:682K  onsemi
fdd2670.pdf pdf_icon

FDD2670

FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fas t switching speed These MOSFET's feature ... See More ⇒

 9.1. Size:606K  fairchild semi
fdd26an06a0.pdf pdf_icon

FDD2670

August 2004 FDD26AN06A0 N-Channel PowerTrench MOSFET 60V, 36A, 26m Features Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv... See More ⇒

 9.2. Size:108K  fairchild semi
fdd2612.pdf pdf_icon

FDD2670

August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers. It has be... See More ⇒

Otros transistores... FDD16AN08A0F085 , FDD18N20LZ , STU102S , FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , BS170 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 .

 

 
Back to Top

 


FDD2670  FDD2670  FDD2670 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847 | AP4846 | AP4813K | AP4812S | AP4812 | AP40P05 | AP40P04Q | AP40P04K | AP40P04G | AP40N100LK | AP40N100K

 

 

 
Back to Top

 

Popular searches

irfp260 | ksc2383 | 2n3773 | b772 transistor | 50n06 | mje350 | 2n3866 | irf 3205

 


 
.