FDD2670 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD2670
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Paquete / Cubierta: TO252 DPAK

Búsqueda de reemplazo de MOSFET FDD2670

FDD2670 Datasheet (PDF)

..1. Size:95K fairchild semi
fdd2670.pdf

November 2001FDD2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs

..2. Size:682K onsemi
fdd2670.pdf

FDD2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fas t switching speedThese MOSFET's feature

9.1. Size:606K fairchild semi
fdd26an06a0.pdf

August 2004FDD26AN06A0N-Channel PowerTrench MOSFET60V, 36A, 26mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv

9.2. Size:108K fairchild semi
fdd2612.pdf

August 2001FDD2612200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional High performance trench technology for extremelyswitching PWM controllers. It has be

9.3. Size:871K fairchild semi
fdd26an06 f085.pdf

Aug 2011FDD26AN06A0_F085N-Channel PowerTrench MOSFET60V, 36A, 26mApplicationsFeatures Motor / Body Load Control rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A ABS Systems Qg(tot) = 13nC (Typ.), VGS = 10V Powertrain Management Low Miller Charge Injection Systems Low QRR Body Diode DC-DC converters and Off-line UPS UIS Capability (Si

9.4. Size:821K onsemi
fdd26an06a0 f085.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDD16AN08A0F085 , FDD18N20LZ , STU102S , FDD20AN06A0F085 , FDD24AN06LA0F085 , FDD2572 , FDD2572F085 , FDD2582 , IRFP250 , STU09N25 , FDD26AN06A0F085 , FDD306P , FDD3510H , STU06L01 , FDD3670 , STU04N20 , FDD3672 .

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