SP3906 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SP3906
   Código: 3906
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 3 nC
   trⓘ - Tiempo de subida: 174 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: PDFN5X6

Búsqueda de reemplazo de MOSFET SP3906

SP3906 Datasheet (PDF)

..1. Size:107K samhop
sp3906.pdf

GreenProductSP3906aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.85 @ VGS=10VSuface Mount Package.35V 5A131 @ VGS=4.5VESD Protected.5 4D2 G 26D2 3S 2PIN1D1 7 2 G 18 1D1 S 1PDFN 5x6(TA=

9.1. Size:111K samhop
sp3901.pdf

GreenProductSP3901aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.50 @ VGS=10VSuface Mount Package.30V 5.8A80 @ VGS=4.5VD1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

9.2. Size:112K samhop
sp3902.pdf

GreenProductSP3902aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17 @ VGS=10VSuface Mount Package.30V 10A27 @ VGS=4.5V D1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

9.3. Size:113K samhop
sp3903.pdf

GreenProductSP3903aS mHop Microelectronics C orp.Ver 1.4Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.22 @ VGS=10VSuface Mount Package.30V 7.5A32 @ VGS=4.5V D1 D1 D2 D2PIN1PDFN 5x6S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless ot

9.4. Size:111K samhop
sp3900.pdf

GreenProductSP3900aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.42 @ VGS=10VSuface Mount Package.30V 4.5A74 @ VGS=4.5V D1 D1 D2 D2DFN 3x3PIN1S1 G1 S2 G2ABSOLUTE MAXIMUM RATINGS (TA=25C unless oth

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