NCE65N520 Todos los transistores

 

NCE65N520 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N520
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
   Paquete / Cubierta: TO220
 

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NCE65N520 Datasheet (PDF)

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NCE65N520

NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria

 0.1. Size:731K  ncepower
 nce65n520d.pdf pdf_icon

NCE65N520

NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 0.2. Size:736K  ncepower
 nce65n520k.pdf pdf_icon

NCE65N520

NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 0.3. Size:757K  ncepower
 nce65n520i.pdf pdf_icon

NCE65N520

NCE65N520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

MOSTRAR MÁS

Otros transistores... NCE65N330I , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K , K3569 , NCE65N520D , NCE65N520F , NCE65N520I , NCE65N520K , NCE65N760 , NCE65N760D , NCE65N760F , NCE65N760I .

History: SPB80N10LG | IPD50P04P4-13 | HM2N10MR | SUP75P05-08 | FQB13N50CTM | HSS3402A | HM20N15D

 

 
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