ZXM61P03F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM61P03F
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.1 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de ZXM61P03F MOSFET
ZXM61P03F Datasheet (PDF)
zxm61p03f.pdf

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT
zxm61p03f.pdf

Product specificationZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from TY utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Lo
zxm61p03ftc.pdf

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT
zxm61p03fta.pdf

ZXM61P03F30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceSOT
Otros transistores... DMP3056LSS , DMP3098L , DMP3098LDM , DMP3098LSD , DMP3098LSS , DMP3120L , DMP3130L , DMP3160L , IRFZ24N , ZXM64P03X , ZXM66P03N8 , ZXMD63P03X , ZXMP3A13F , ZXMP3A16DN8 , ZXMP3A16G , ZXMP3A16N8 , ZXMP3A17DN8 .
History: FJ350301 | IXFH69N30P | IXFH24N80P | NTD65N03R | IXFH15N100Q3 | RFP4N100 | F11F60C3M
History: FJ350301 | IXFH69N30P | IXFH24N80P | NTD65N03R | IXFH15N100Q3 | RFP4N100 | F11F60C3M



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