ZXM64P03X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM64P03X
Código: ZXM4P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.1 W
Tensión drenaje-fuente |Vds|: 30 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 3.8 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 46 nC
Conductancia de drenaje-sustrato (Cd): 825 pF
Resistencia drenaje-fuente RDS(on): 0.1 Ohm
Empaquetado / Estuche: MSOP8
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ZXM64P03X Datasheet (PDF)
0.1. zxm64p03x.pdf 
Size:333K _diodes
ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP
0.2. zxm64p03xta.pdf Size:331K _zetex
ZXM64P03X30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.075 ID=-3.8ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistanceMSOP
6.1. zxm64p035l3.pdf Size:106K _diodes
ZXM64P035L335V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -12ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on
6.2. zxm64p035gta.pdf Size:100K _zetex
ZXM64P035G35V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -35V: RDS(on) = 0.075 : ID = -5.3ADESCRIPTIONThis new generation of high cell density planar MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURES Low on
Otros transistores... DMP3098L , DMP3098LDM , DMP3098LSD , DMP3098LSS , DMP3120L , DMP3130L , DMP3160L , ZXM61P03F , IRF1010E , ZXM66P03N8 , ZXMD63P03X , ZXMP3A13F , ZXMP3A16DN8 , ZXMP3A16G , ZXMP3A16N8 , ZXMP3A17DN8 , ZXMP3A17E6 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: IPB17N25S3-100 | IPB160N04S4L-H1 | IPB140N08S4-04 | IPB120P04P4-04 | IPB120N08S4-04 | IPB120N08S4-03 | IPB120N04S4L-02 | IPB120N04S4-04 | IPB120N03S4L-03 | IPB110P06LM | IPB060N15N5 | IPB032N10N5 | IPB024N10N5 | IPB019N08N5 | IPB017N10N5LF | IPAW70R950CE