ECH8667 Todos los transistores

 

ECH8667 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ECH8667

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 13 nC

Resistencia drenaje-fuente RDS(on): 0.03 Ohm

Empaquetado / Estuche: ECH8

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ECH8667 Datasheet (PDF)

1.1. ech8667.pdf Size:355K _sanyo

ECH8667
ECH8667

ECH8667 Ordering number : ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8667 Applications Features ON-resistance RDS(on)1=30m (typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage

4.1. ech8660.pdf Size:494K _sanyo

ECH8667
ECH8667

ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8660 Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance Spe

4.2. ech8661.pdf Size:436K _sanyo

ECH8667
ECH8667

ECH8661 Ordering number : ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8661 Applications Features • ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) Ω Ω • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

 4.3. ech8663r.pdf Size:73K _sanyo

ECH8667
ECH8667

Ordering number : ENA1184 ECH8663R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8663R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Pa

4.4. ech8664r.pdf Size:65K _sanyo

ECH8667
ECH8667

Ordering number : ENA1185 ECH8664R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8664R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Pa

 4.5. ech8668.pdf Size:369K _sanyo

ECH8667
ECH8667

ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8668 Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. • 1.8V drive. • Halogen free compliance.

4.6. ech8662.pdf Size:67K _sanyo

ECH8667
ECH8667

Ordering number : ENA1259 ECH8662 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8662 Applications Features Low ON-resistance. 2.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS 10 V Drain Cu

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