ECH8667 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ECH8667
   Código: TN
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.2 V
   Qgⓘ - Carga de la puerta: 13 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: ECH8

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ECH8667 Datasheet (PDF)

..1. Size:355K sanyo
ech8667.pdf

ECH8667Ordering number : ENA1778SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8667ApplicationsFeatures ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

..2. Size:316K onsemi
ech8667.pdf

Ordering number : ENA1778AECH8667P-Channel Power MOSFEThttp://onsemi.com 30V, 5.5A, 39m , Dual ECH8Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltag

8.1. Size:65K sanyo
ech8664r.pdf

Ordering number : ENA1185 ECH8664RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8664RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

8.2. Size:494K sanyo
ech8660.pdf

ECH8660Ordering number : ENA1358BSANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8660ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free complianceSpe

8.3. Size:436K sanyo
ech8661.pdf

ECH8661Ordering number : ENA1777SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8661ApplicationsFeatures ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

8.4. Size:369K sanyo
ech8668.pdf

ECH8668Ordering number : ENA1510SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8668ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance.

8.5. Size:73K sanyo
ech8663r.pdf

Ordering number : ENA1184 ECH8663RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8663RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings

8.6. Size:67K sanyo
ech8662.pdf

Ordering number : ENA1259 ECH8662SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8662ApplicationsFeatures Low ON-resistance. 2.5V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 40 VGate-to-Source Voltage VGSS 10

8.7. Size:419K onsemi
ech8661.pdf

Ordering number : ENA1777AECH8661Power MOSFEThttp://onsemi.com 30V, 7A, 24m , 30V, 5.5A, 39m , Complementary Dual ECH8Features ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg hig

8.8. Size:385K onsemi
ech8668.pdf

Ordering number : ENA1510AECH8668Power MOSFEThttp://onsemi.com 20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8Features The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode inSp

Otros transistores... ECH8655R , ECH8657 , ECH8659 , ECH8660 , ECH8661 , ECH8662 , ECH8663R , ECH8664R , 50N06 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , EMH1307 , EMH1405 , EMH2308 , EMH2407 .

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