ECH8667 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ECH8667
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.3 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 5.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de compuerta (Qg): 13 nC
Resistencia drenaje-fuente RDS(on): 0.03 Ohm
Empaquetado / Estuche: ECH8
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ECH8667 Datasheet (PDF)
1.1. ech8667.pdf 
Size:355K _sanyo
ECH8667 Ordering number : ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8667 Applications Features ON-resistance RDS(on)1=30m (typ.) ? 4V drive Halogen free compliance Specifications at Ta=25C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage
4.1. ech8660.pdf Size:494K _sanyo
ECH8660 Ordering number : ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8660 Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance Spe
4.2. ech8661.pdf Size:436K _sanyo
ECH8661 Ordering number : ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8661 Applications Features • ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) Ω Ω • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi
4.3. ech8663r.pdf Size:73K _sanyo
Ordering number : ENA1184 ECH8663R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8663R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Pa
4.4. ech8664r.pdf Size:65K _sanyo
Ordering number : ENA1185 ECH8664R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8664R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Pa
4.5. ech8668.pdf Size:369K _sanyo
ECH8668 Ordering number : ENA1510 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8668 Applications Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. • 1.8V drive. • Halogen free compliance.
4.6. ech8662.pdf Size:67K _sanyo
Ordering number : ENA1259 ECH8662 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8662 Applications Features Low ON-resistance. 2.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS 10 V Drain Cu
Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
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