aon2701.pdf Principales características:
AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AON2701/L uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON) and low gate charge. A ID = -3A (VGS = -4.5V) Schottky diode is provided to facilitate the RDS(ON)
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