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ht-3201.pdf Principales características:

ht-3201ht-3201

PRELIMINARY HT-3201 High-Temperature Silicon Carbide (SiC) Half-Bridge Power Module N-Channel MOSFET Version FEATURES 1200 V / 3.6 m Industry standard footprint High temperature T = 225 C c(max) T = 225 C J(max) AS9100 Rev. C-certified manufacturing, traceable throughout value chain Ultra-fast switching (

 

Keywords - ALL TRANSISTORS. Principales características

 ht-3201.pdf Design, MOSFET, Power

 ht-3201.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ht-3201.pdf Database, Innovation, IC, Electricity

 

 
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