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apt8015jvr.pdf Principales características:

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APT8015JVR 800V 44A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche Tested D Lower Leakage Popular SOT-227 Package G S Symbol Parameter APT8015JVR UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25 C 44 Amps IDM Pulsed Drain Current 1 176 VGS Gate-Source Voltage Continuous 30 Volts VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25 C 700 Watts PD Linear Derating Factor 5.6 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" f

 

Keywords - ALL TRANSISTORS. Principales características

 apt8015jvr.pdf Design, MOSFET, Power

 apt8015jvr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt8015jvr.pdf Database, Innovation, IC, Electricity

 

 
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