cmpta14e.pdf Principales características:
CMPTA14E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT NPN DESCRIPTION SILICON DARLINGTON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufactured by the epitaxial planar process, epoxy molded in a surface mount SOT-23 package, designed for applications requiring extremely high gain. MARKING CODE C1NE FEATURED ENHANCED SPECIFICATIONS BVCBO from 30V min to 40V min. SOT-23 CASE VCE(SAT) from 1.5V max to 1.0V max. hFE from 10K min to 30K min. MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCES 40 V Emitter-Base Voltage VEBO 10 V Continuous Collector Current IC 500 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 C Thermal Resistance JA
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