cep14a04 ceb14a04.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep14a04 ceb14a04.pdf Principales características:

CEP14A04/CEB14A04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 180A, RDS(ON) = 5m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 V 180 A ID@ TC = 25 C Drain Current-Continuous ID@ TC = 100 C 125 A Drain Current-Pulsed a IDM 720 A Maximum Power Dissipation @ TC = 25 C 200 W PD - Derate above 25 C 1.3 W/ C Single Pulsed Avalanche Energy d EAS 633 mJ Single Pulsed Avalanche Current d IAS 65 A TJ,Tstg Operating and Store Temperature Range -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistan