cep6060n ceb6060n.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep6060n ceb6060n.pdf Principales características:

CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 42 A Drain Current-Pulsed a IDM 168 A Maximum Power Dissipation @ TC = 25 C 88 W PD - Derate above 25 C 0.59 W/ C Operating and Store Temperature Range TJ,Tstg -65 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 1.7 C/W Thermal Resistance, Junction-to-Ambient R JA 62.5 C/W Details are subject to change without n