cep840g ceb840g cef840g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

cep840g ceb840g cef840g.pdf Principales características:

CEP840G/CEB840G CEF840G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP840G 500V 0.85 8A 10V CEB840G 500V 0.85 8A 10V CEF840G 500V 0.85 8A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) TO-220 TO-220F ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Limit Parameter Symbol Units TO-220/263 TO-220F Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS V 30 Drain Current-Continuous ID 8 8 e A Drain Current-Pulsed a IDM f 32 32 e A Maximum Power Dissipation @ TC = 25 C 125 40 W PD - Derate above 25 C 1.0 0.32 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance,