ceu6086 ced6086.pdf datasheet:
CED6086/CEU6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 50A, RDS(ON) = 8.7m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Drain Current-Continuous ID 50 A Drain Current-Pulsed a IDM 200 A Maximum Power Dissipation @ TC = 25 C 50 W PD - Derate above 25 C 0.33 W/ C Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case R JC 3 C/W Thermal Resistance, Junction-to-Ambient R JA 50 C/W Rev 3. 2011.July Details are
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ceu6086 ced6086.pdf Design, MOSFET, Power
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