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November 2008 UniFETTM FDA28N50F N-Channel MOSFET 500V, 28A, 0.175 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low Gate Charge ( Typ. 80nC) stripe, DMOS technology. Low Crss ( Typ. 38pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt Capability correction. RoHS Compliant D G TO-3PN G D S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Dr

 

Keywords - ALL TRANSISTORS. Principales características

 fda28n50f.pdf Design, MOSFET, Power

 fda28n50f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fda28n50f.pdf Database, Innovation, IC, Electricity

 

 
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