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fda38n30.pdf Principales características:

May 2010 UniFETTM FDA38N30 N-Channel MOSFET 300V, 38A, 0.085 Features Description RDS(on) = 0.07 ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 60 nC) DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- 100% avalanche tested mance, and withstand high energy pulse in the avalanche and Improved dv/dt capability commutation mode. These devices are well suited for high effi- ESD Improved capability cient switched mode power supplies and active power factor RoHS Compliant correction. D G TO-3PN G D S FDA Series S MOSFET Maximum Ratings TC = 25oC unless otherwis

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 fda38n30.pdf Design, MOSFET, Power

 fda38n30.pdf RoHS Compliant, Service, Triacs, Semiconductor

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