fdd8780 fdu8780.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fdd8780 fdu8780.pdf Principales características:

March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m General Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low Low gate charge Qg(10) = 21nC(Typ), VGS = 10V rDS(on) and fast switching speed. Low gate resistance Avalanche rated and 100% tested Application RoHS Compliant Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture D G D G S I-PAK G D S Short Lead I-PAK (TO-251AA) S MOSFET Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to S