Todos los transistores

 

fdmc86102.pdf Principales características:

fdmc86102fdmc86102

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m Features General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in Power 33 yet maintain superior switching performance. 100% UIL Tested RoHS Compliant Application DC - DC Conversion Bottom Top Pin 1 S D 5 4 G S S G D 6 3 S D 7 2 S D D D 8 1 S D D Power 33 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage 20 V Drain Current -Continuous (Package limited) TC = 25 C 20 -Continuous (Silicon limited) TC = 25 C 29 ID A

 

Keywords - ALL TRANSISTORS. Principales características

 fdmc86102.pdf Design, MOSFET, Power

 fdmc86102.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc86102.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.