fdms0309as.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fdms0309as.pdf Principales características:

January 2015 FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 m Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This Advanced package and silicon combination for low rDS(on) and device has the added benefit of an efficient monolithic Schottky high efficiency body diode. SyncFETTM Schottky Body Diode Applications MSL1 Robust Package Design Synchronous Rectifier for DC/DC Converters 100% UIL tested Notebook Vcore/GPU Low Side Switch RoHS Compliant Networking Point of Load Low Side Switch Telecom Secondary Side Rectification Bot