fdms3604as.pdf datasheet:

March 2011 FDMS3604AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A connected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A buck converters. The control MOSFET (Q1) and synchronous Q2 N-Channel SyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A efficiency. Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communications inductance and reduced switch node ringing Ge