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December 2011 FDMS3610S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous Q2 N-Channel SyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A efficiency. Max rDS(on) = 2.2 m at VGS = 4.5 V, ID = 27 A Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communications inductance and reduced switch node

 

Keywords - ALL TRANSISTORS. Principales características

 fdms3610s.pdf Design, MOSFET, Power

 fdms3610s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms3610s.pdf Database, Innovation, IC, Electricity

 

 
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