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fdms86500dc.pdf Principales características:

July 2013 FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at VGS = 8 V, ID = 24 A technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely High performance technology for extremely low rDS(on) low Junction-to-Ambient thermal resistance. 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D S D D D S D S Pin 1 G D S S S Pin 1 S D G Top

Keywords - ALL TRANSISTORS. Principales características

 fdms86500dc.pdf Design, MOSFET, Power

 fdms86500dc.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms86500dc.pdf Database, Innovation, IC, Electricity