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fdms86500l.pdf Principales características:

March 2011 FDMS86500L N-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 A ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body and high efficiency diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S G D 5 4 S

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 fdms86500l.pdf Design, MOSFET, Power

 fdms86500l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms86500l.pdf Database, Innovation, IC, Electricity