Todos los transistores

 

fdms86550.pdf Principales características:

fdms86550fdms86550

April 2014 FDMS86550 N-Channel PowerTrench MOSFET 60 V, 155 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 A been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low rDS(on) yet maintain superior switching performance. and high efficiency MSL1 robust package design Applications 100% UIL tested Primary DC-DC MOSFET RoHS Compliant Secondary Synchronous Rectifier Load Switch Bottom Top Pin 1 S S D S Pin 1 S G D S D S D D D D G D Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage

 

Keywords - ALL TRANSISTORS. Principales características

 fdms86550.pdf Design, MOSFET, Power

 fdms86550.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms86550.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.