fdp16n50 fdpf16n50.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fdp16n50 fdpf16n50.pdf Principales características:

April 2007 TM UniFET FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features Description 16A, 500V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 32 nC) stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G TO-220F TO-220 G D S G D S FDPF Series FDP Series S Absolute Maximum Ratings Symbol Parameter FDP16N50 FDPF16N50 Unit VDSS Drain-S