fqa13n50c f109.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

fqa13n50c f109.pdf Principales características:

December 2013 FQA13N50C_F109 N-Channel QFET MOSFET 500 V, 13.5 A, 480 m Description Features These N-Channel enhancement mode power field effect 13.5 A, 500 V, RDS(on) = 480 m (Max.) @ VGS = 10 V, transistors are produced using Fairchild s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology Low Gate Charge (Typ. 43 nC) has been especially tailored to minimize on-state resistance, provide superior switching performance, and Low Crss (Typ. 20 pF) withstand high energy pulse in the avalanche and 100% Avalanche Tested commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power Improved dv/dt Capability factor correction, electronic lamp ballasts based on half bridge topology. D G G D TO-3PN S S Absolute Maximum Ratings TC = 25 C unless otherwis