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fqp9n25c fqpf9n25c.pdf Principales características:

fqp9n25c_fqpf9n25cfqp9n25c_fqpf9n25c

QFET FQP9N25C/FQPF9N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.8A, 250V, RDS(on) = 0.43 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 26.5 nC) planar stripe, DMOS technology. Low Crss ( typical 45.5 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls. D G TO-220 TO-220F G D S G

 

Keywords - ALL TRANSISTORS. Principales características

 fqp9n25c fqpf9n25c.pdf Design, MOSFET, Power

 fqp9n25c fqpf9n25c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqp9n25c fqpf9n25c.pdf Database, Innovation, IC, Electricity

 

 
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