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January 2014 FQD1N80 / FQU1N80 N-Channel QFET MOSFET 800 V, 1.0 A, 20 Description Features This N-Channel enhancement mode power MOSFET is 1.0 A, 800 V, RDS(on) = 2 0 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 0.5 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 2.7 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings TC = 25 C unless otherwise noted. Symbol Parameter FQD1N80TM / FQU1N80TU Unit VDSS Drain-Source Voltage 800 V

 

Keywords - ALL TRANSISTORS. Principales características

 fqu1n80.pdf Design, MOSFET, Power

 fqu1n80.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqu1n80.pdf Database, Innovation, IC, Electricity

 

 
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