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hgtd7n60c3s hgtp7n60c3.pdf Principales características:

HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated 14A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower Short Circuit Rating on-state voltage drop varies only moderately between 25oC Low Conduction Loss and 150oC. The IGBT is ideal for many high voltage switching Packaging applications operating at moderate frequencies where low JEDEC TO-220AB conduction losses are essential, such as AC and DC motor EMITTER COLLECTOR controls, power supplies and drivers

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 hgtd7n60c3s hgtp7n60c3.pdf Design, MOSFET, Power

 hgtd7n60c3s hgtp7n60c3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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