hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

hgtp7n60a4 hgtg7n60a4 hgt1s7n60a4.pdf Principales características:

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These 600V Switching SOA Capability devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC much lower on-state voltage drop varies only moderately Low Conduction Loss between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode p