huf75337g3 huf75337p3 huf75337s3s.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

huf75337g3 huf75337p3 huf75337s3s.pdf Principales características:

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, Available on the web at www.fairchildsemi.com resulting in outstanding performance. This device is capable Peak Current vs Pulse Width Curve of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored UIS Rating Curve charge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators, -