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2sk3609-01.pdf Principales características:

2SK3609-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (Tc=25 C unless otherwise specified) Item Symbol Ratings Unit Equivalent circuit schematic V Drain-source voltage VDS 200 V VDSX *5 170 A Continuous drain current ID Tc=25 C 18 D Drain A Ta=25 C 2.7 ** A Pulsed drain current ID(puls] 72 G Gate V Gate-source voltage VGS 30 A Non-repetitive Avalanche current IAS *2 18 mJ Maximum Avalanche Energy EAS *1 125.5 S1 Source kV/ s Maximum Drain-Source dV/dt dVDS/dt *4 20 S2 Source Peak Diode Recovery dV

Keywords - ALL TRANSISTORS. Principales características

 2sk3609-01.pdf Design, MOSFET, Power

 2sk3609-01.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sk3609-01.pdf Database, Innovation, IC, Electricity