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GOFORD 16N50 500V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 500V 0.38 16A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 16A, 500V, RDS(on) = 0.38 @VGS = 10 V Ordering Information Low gate charge ( typical 45nC) PART NUMBER PACKAGE BRAND Fast switching 100% avalanche tested 16N50 TO-220 0GFD Improved dv/dt capability HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 Page 1 GOFORD 16N50 Absolute Maximum Ratings TC = 25 Cunless otherwi

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