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g110n06 to252.pdf Principales características:

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GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 110 55V 5.8 5.4 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Special process technology for high ESD capability Marking and pin assignment Application Power switching application LED backlighting Uninterruptible power supply TO-252 Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 55 V VDS Gate-Source Voltage 2

 

Keywords - ALL TRANSISTORS. Principales características

 g110n06 to252.pdf Design, MOSFET, Power

 g110n06 to252.pdf RoHS Compliant, Service, Triacs, Semiconductor

 g110n06 to252.pdf Database, Innovation, IC, Electricity

 

 
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